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LDMOS 分立器件

峰值功率20W-4000W; 工作频率10MHz-6GHz; 基于自主知识产权的12V、28V、50V LDMOS 工艺平台开发,全国产供应; 封装材料自主开发设计,具有低成本、高可靠性。

  • Min. Freq.(MHz)
    700
    3000
    6000
  • Max. Freq.(MHz)
    1000
    2000
    3000
  • VDD(V)
    18
    28
  • Pavg(dBm)
    18
    4
  • ACPR
    -47.1
    -48
    -49.5
    -48.9
    -47
    -46.3
    -44.5
    -45
    -35
    -25
  • Test Freq.(MHz)
    3400
    2140
    2600
    3450
    184
    940
    881
    1840
    1960
    945
    780
    2140
  • MP Status
    MP
  • Package
    PDFN5*5
    TO270
    ACC2110S-2L2L
    ACS2110S-4L
  • Process
    LDMOS

显示6种产品

产品型号
Min. Freq.(MHz)
Max. Freq.(MHz)
VDD(V)
Pavg(dBm)
DE@Pavg
Gain(dB)
ACPR
Test Freq.(MHz)
MP Status
Package
Process
HTN7G38S007P 70038002828.817.414.2-47.13400MPPDFN5*5LDMOS
HTN8G27S015P 700270028301220.2-49.52600MPPDFN5*5LDMOS
HTN8G36S015P 33003600283011.918.2-48.93450MPPDFN5*5LDMOS
HTN7G21S040P 7002100283616.516.1-471840MPTO270LDMOS
HTN7G09S060P 100960283919.521.8-46.3940MPTO270LDMOS
HTN7G21S160H 18052170284221.917.3-451840MPACC2110S-2L2LLDMOS
HTN7G21P160H 180521702844.84016.7-351960MPACC2110S-4L2LLDMOS
HTH9G09P550S 70096048495420-25945MPACS2110S-4LLDMOS
HTH9G09P700S 7588034850.55619.5-25780MPACS3210S-4LLDMOS
HTN8G27S020PG 700270028345519/2140MPT0270/
HTH9G09P551S 400NA48495020-34645MPACS2110LDMOS
HTN9G22P370S 1805NA2847.34816-302140MPACS2110LDMOS